溶液噴霧プラズマCVD法によるアルコキシド溶液からの組成傾斜TiN-AINとTiN-SiN_x膜の作製(<特集>セラミックスインテグレーション)

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Four kinds of compositionally graded (CGed) AlN-TiN and SiN_x-TiN films were prepared on a Si wafer substrate at about 700℃ by a plasma chemical vapor deposition (CVD) technique designed to inject alkoxide solutions (titanium tetra-ethoxide, aluminum tri-buthoxide, and hexa-methyl-disiloxane) stabilized with triethanol-amine into a thermal Ar/N_2/H_2 plasma. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and electrical resistivity. The relative atomic concentrations of N, Ti, Al, Si, O, and C were determined by X-ray photoelectron spectroscopy (XPS). It was shown by XRD and XPS that CGed AlN-TiN films formed with monolithic AlN and TiN composition on surface and substrate, respectively, with corresponding changes of Al and Ti as a function of distance from the interface. Similarly, CGed SiN_x-TiN films were prepared, with complementary changes of their Si and Ti contents. The existence of SiN_x was assumed from the presence of Si-N bonding in N_<1s>, and Si_<2p> XPS spectra, despite the lack of XRD diffraction peaks related to silicon nitrides. CGed AlN-TiN films were 1-3 μm thick and showed the formation of flower-like agglomerated particles consisting of regular 0.2-0.3 μm fine particles on the surface, whereas spherical particles of 3 μm size are formed on surface of CGed SiN_x-TiN films. The electrical resistivity of the films changed from 300 to 7 × 1O^4 μΩ cm, depending on the type of CGed film.
社団法人日本セラミックス協会の論文
2002-05-01

溶液噴霧プラズマCVD法によるアルコキシド溶液からの組成傾斜TiN-AINとTiN-SiN_x膜の作製(<特集>セラミックスインテグレーション)

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