スプレー熱分解法による二硫化銅インジウム薄膜の形成

概要

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Copper indium disulfide (CuInS_2) thin films were successfully prepared from non-chlorinated starting materials on glass substrates by a spray pyrolysis deposition (SPD) method. The spray solutions were composed of water-ethanol (1 : 1 in volume) including copper acetate, indium acetylacetonate, and thiourea. The experimental parameters for the stoichiometric and well-crystallized CuInS_2 thin film formation were determined as follows : spraying rate 1.0 ml/s, spraying period 0.5 s, substrate temperature 350℃, and S/(Cu+In) ratio of the spray solution 1.25. The dark brown CuInS_2 thin film obtained was composed of rounded grains 1-3 μm in size with a direct band gap of 1.48 eV. The CuInS_2/CdS heterojunction fabricated by the SPD method presented photovoltaic characteristics, though the current was only 5 μA.
社団法人日本セラミックス協会の論文
2002-02-01