Pt配向膜の結晶性に及ぼす基板のエッチング効果

概要

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The treatment of MgO substrates by the H_3PO_4 wet-etching method were carried out in order to remove the impurities (H_2O or CO_2) in the surface layer of a MgO single crystal. Pt thin films were deposited on MgO substrates by rf-magnetron sputtering method. To evaluate the effect of the treatment, orientation and crystallinity of the obtained films were investigated. The etching rate in this experiment was about 2.90 nm/s. It was considered that crystallinity of the MgO substrates decreased due to H_2O or CO_2 in the surface region with a thickness of 1 μm. The surface roughness of substrates and thin films increased with increasing etching time for the MgO substrates. All of the obtained films showed [100]-orientation. The measurement of the rocking curve of (100) peak of the Pt film deposited on the MgO substrate etched for 5 min indicated that the half width was about 0.62 deg. and that the film had a good crystallinity. Pt films deposited on MgO substrates etched for 5 to 60 min exhibited epitaxial [100]-orientation from the measurement of half width for X-ray rocking curves, TEM micrographs, electron diffraction patterns and spacing of lattice planes in lattice images.
社団法人日本セラミックス協会の論文
1992-08-01