アモルファス(Pb,La)(Zr,Ti)O_3薄膜の結晶化とその電気特性

概要

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Dense amorphous PLZT films with composition (Pb_<0.925>La_<0.075>) (Zr_<0.4>Ti_<0.6>) O_3 were deposited on Pt/MgO (100) substrates by rf-magnetron sputtering without heating the substrates and were subsequently crystallized by postdeposition annealing. The optimum conditions in the two-step annealing process to crystallize the amorphous PLZT films were investigated. The post-deposition-annealed films showed excellent crystallinity and c-axis orientation when the amorphous PLZT films were annealed in an oxygen flow at a soaking temperature for the initial nucleation process of T_1 = 300℃, a temperature for crystal growth process of T_2 = 750℃, and the T_2-soaking time of t_2 = 60 min. Conventional Pt/PLZT/Pt capacitors were fabricated by forming Pt top electrodes on crystallized 300-nm-thick PLZT films. The remanent polarization and the coercive field of the present capacitors, which indicated almost symmetric P-E hysteresis loops, were 2P_r≒30 μC/cm^2 and 2E_c≒90 kV/cm, respectively. The high-endurance PLZT capacitors with excellent ferroelectric properties produced by the present optimized crystallization have great potential for application to nonvolatile memory devices.
社団法人日本セラミックス協会の論文
2001-07-01