Free-Carrier Infrared Absorption in III-V Semiconductors IV. Inter-Conduction Band Transitions

概要

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The infrared absorption bands observed in 1〜5μ are theoretically investigated under the assumption that the absorption is due to the transition of electrons between two conduction bands which have the minima being located at different points in the zone. With use of the second order perturbation in the presence of photons and crystal imperfections, the theoretical curves give different shapes according as the possible intermediate states are the D-or I-type. The first has a sharp peak in the absorption band, while the latter forms a broad band. For AlSb and GaSb, the observed shapes of the absorption bands agree reasonably with the calculated ones for the D-type. The carrier concentration dependence of the absorption coefficient in AlSb can also be explained fairly well. For GaAs, the absorption band calculated for the I-type agrees well with the experimental one at the points of the sbape, the carrier concentration dependence and the temperature dependence. Also, the gap energy between two minima on the conduction bands is obtained as 0.44 eV for GaAs. It is concluded that the bands observed in GaAs and GaSb are due to the inter-conduction band transition.
社団法人日本物理学会の論文
1964-09-05