Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSb

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概要

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• The free carrier absorption data for n-GaAs, -InP, -GaP and -GaSb are analysed in order to investigate the scattering mechanism of electrons. The magnitudes of the deformation potential constant E_1 are found to be 〜6eV for GaAs, 〜0eV for InP, 〜55eV for GaP and 〜60eV for GaSb. It is found from this that, among acoustic and optical phonon scatterings, the former is predominant in GaP and GaSb, and the latter predominant in GaAs and InP. The impurity concentration is found to be very large compared with the electron concentration, for the samples of GaAs and InP with low carrier concentrations. This suggests the presence of some additional scatterers different from the ordinary ones, that is, lattice vibrations and ionized impurities. From the present analysis, it is inferred that the absorption coefficient due to additional scatterers have a wavelength dependence very simlar to the one due to ionized impurities.

• 社団法人日本物理学会の論文
• 1964-05-05

著者

• Haga Eijiro

  Department Of Applied Physics Faculty Of Engineering Nagoya University

• Kimura Hatsuo

  Department Of Applied Physics And Chemistry Fukui University Of Technology

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