Electrical Properties and Energy Spectrum of In-Doped Pb_<1-x>Ge_xTe
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概要
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Effects of In-impurity on the electrical properties of an In-doped n-typePb. ,Ge,Te (,v=0.02) are investigated between 4.2 K and 300 K. It is foundthat the Hall coefficient shows the qualitatively similar anomalous behaviour tothat of In-doped PbTe. But, the resistivity increased almost exponentially withincreasing temperature. The phase transition is not affected by In-doping. Theenergy spectrum in the rhombohedral phase is studied by observing the quantumoscillations of the sound velocity at 1.5 K. It is found that the angular dependencesof the observed periods are well fitted to the model which has been proved to bevalid for undoped Pb. -.Ge.Te in our previous work.
- 社団法人日本物理学会の論文
- 1984-08-15
著者
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Tsuji K
Department Of Physics Faculty Of Science And Technology Keio University
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Kumashiro Y
Central Research Laboratory Ishihara Sangyo Kaisha Ltd.
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Kumashiro Yoshimasa
Department Of Physics Faculty Of Science Kyushu University
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Tamura Kozaburo
Department Of Physics Kyoto University
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Tamura Kozaburo
Department Of Physics Faculty Of Science Kyoto University:faculty Of Integrated Arts And Sciences Hi
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Takano S
University Of Tsukuba
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TAKANO Shuzo
Department of Physics,Kyushu University
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TSUJI Kazutaka
Central Research Laboratory,Hitachi Ltd.
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Takano Shuzo
Department Of Computer And Electronics Kyushu Institute Of Techonology
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Takano Shuzo
University of Tsukuba
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