Electrical Resistivity of Liquid Te, Ga_2 Te_3, In_2Te_3 and Tl_2 Te under High Pressure

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概要

• 論文の詳細を見る

• Electrical resistivity p of liquid semiconductors Te, Ga.Te., InzTe3 and Tl.Tehas been measured up to 30 kbar and 900'C. The resistivity p of liquid Ga.Te.and In.Te3 rapidly decreases with pressure in the low pressure region ($5 kbar),while p of liquid T].Te gradually decreases in the wide pressure range. Thisdifference is discussed in connection with the bonding character of constituentItems.

• 社団法人日本物理学会の論文
• 1979-02-15

著者

• Tsuji K

  Department Of Physics Faculty Of Science And Technology Keio University

• Tamura Kozaburo

  Department Of Physics Kyoto University

• Tamura Kozaburo

  Department Of Physics Faculty Of Science Kyoto University

• Tamura Kozaburo

  Department Of Physics Faculty Of Science Kyoto University:faculty Of Integrated Arts And Sciences Hi

• Endo Hirohisa

  Department of Physics, Faculty of Science, Kyoto University

• Endo H

  Faculty Of Science Kyoto University

• Endo Hirohisa

  Department Of Physics Faculty Of Science Kyoto University

• MISONOU Masao

  Department of Physics,Kyoto University

• Misonou Masao

  Department Of Physics Kyoto University

• Misonou Masao

  Department Of Physics Faculty Of Science Kyoto University

• Endo Hirohisa

  Department Of Physics Kyoto University

• Endo Hirohisa

  Department Of Infection Control And Prevention University Of Tokyo Hospital

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