Anderson Localization and Crystalline Defects of 1T-TaS_2
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概要
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The effect of crystalline defects on Anderson localization was investigated andthe localization in IT-TaS. was found to be appreciably enhanced by increasinggrowth temperatures, by reducing the amount of excess sulphur and also byelectron beam bombardment.The electrical resistivity p follows /)CCCXP T "' as a characteristic state ofthe variable range hopping conduction in the temperature region of 4 K to themeasured lowest temperature 0.1 K. Contrary to the theoretical prediction ofo=3 for the two-dimensional system, we found that n=2 is better fitted.
- 社団法人日本物理学会の論文
- 1983-10-15
著者
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Tanuma Sei-ichi
Department of Biochemistry, Tokyo University of Science
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Tanuma Sei-ichi
The Institute For Solid State Physics University Of Tokyo:faculty Of Technology Gunma University
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INADA Rumiko
The Institute for Solid State Physics,University of Tokyo
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ONUKI Yoshichika
The Saitama Institute of Technology
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Inada Rumiko
The Institute For Solid State Physics University Of Tokyo
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Inada Rumiko
The Institute For Solid State Physics The University Of Tokyo
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Tanuma Sei-ichi
The Institute For Solid State Physics The University Of Tokyo
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TANUMA Sei-ichi
The Institute for Solid State Physics, The University of Tokyo
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