Electrical Transport Properties in 2H-NbS_2,-NbSe_2,-TaS_2 and-TaSe_2
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概要
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Detailed measurements of the resistivity and the ][-fall coefficient have been madeon high-quality single crystals of 2H metallic transition-metal dichalcogenidesbetween 4.2 K and 300 K, in order to investigate the carrier scattering mechanismsin a CDW system. The resistivity of 2f-NbS., which has no CDW transition,shows normal behavior. On the other hand, in 277-TaSe. wl'nich has the highestCDW transition temperature (T.=122 K) of 211 family, several anomalousfeatures are observed. The temperature dependence of the resistivity in 2#-TaSe.is -?T'(T<15 K), -T'(30 K<7'<100 K) and AT%B(T>T.). The results wereanalyzed by including a "new" scattering mechanism due to phase fluctuations ofthe CDW (electron-phason scattering, phase disorder scattering). The analysissuggests that McMillan's phonon entropy model is more appropriate in 2#-TaSe.than the conventional model.
- 社団法人日本物理学会の論文
- 1982-01-15
著者
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Naito Michio
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Tanaka Shoji
Department Of Applied Physics Waseda University
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Naito Michio
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
-
Tanaka Shoji
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
-
Tanaka Shoji
Department Of Applied Physics Faculty Fo Engineering University Of Tokyo
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