Electron Tunneling through Te-TeO_2-Pb Junctions
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概要
- 論文の詳細を見る
Electron tunneling through p-type Te-TeO_2-Pb junctions is investigated at the liquid helium temperatures under the magnetic field up to 53 kOe. Phonon effects are observed in the d^2I/dV^2-V characteristics and the energies of E_ι mode and A_2 mode phonons of tellurium are determined to be 14 meV and 11 meV, respectively. Structures due to the tunneling through the surface states in the accumulation layer of tellurium are also observed in the sample whose carrier concentration is around 10^<14>cm^<-3>. The binding energy of the surface state is estimated at about 28 meV in zero magnetic field. This seems to come from the peculial electronic band structure of tellurium.
- 社団法人日本物理学会の論文
- 1973-04-05
著者
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Hagiwara Takaaki
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Hagiwara Takaaki
Department Of Applied Physics University Of Tokyo
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Mizuno Osamu
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Tanaka Shoji
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Mizuno Osamu
Department Of Applied Physics University Of Tokyo:(present Address) Central Research Laboratory Nipp
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Tanaka Shoji
Department Of Applied Physics Faculty Fo Engineering University Of Tokyo
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