Electronic Conduction in the Commensurate Charge Density Wave State of 1T-TaS_2
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概要
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We measured the Hall coefficient and the resistivity of IT-TaS. prepared undervarious growth conditions. We observed a steep decrease of the Hall coefficientabove about 130 K in every sample. From this result, also from the unexpectedlylow carrier dcnsity estimated from the value of the Hall coefficient, we concludethat other gapping mechanism than the CDW formation is working at T., -200 K, such as the Mott Iecalization which Fazekas and Tosatti suggested. Asthe result IT-TaS. becomes a kind of dirty semiconductor in the CCDW state.By introducing a gap in the spectrum we successfully analyzed the electronicconduction in high 7'region above 130 K, by a simple two-carrier model involvingholes and thermally activated electrons across a gap.
- 社団法人日本物理学会の論文
- 1984-07-15
著者
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Tanaka Shoji
Department Of Applied Physics Waseda University
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Okajima Kenji
Department Of Applied Physics The University Of Tokyo:fundamental Research Laboratory Nec Corporatio
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Tanaka Shoji
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Tanaka Shoji
Department Of Applied Physics The University Of Tokyo
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Tanaka Shoji
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Tanaka Shoji
Department Of Applied Physics Faculty Fo Engineering University Of Tokyo
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