Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors : I. Subband Structure of InSb
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概要
- 論文の詳細を見る
The subband structure of z-channel inversion layers on InSb its calculatedself-consistently in the Hartree approximation. A new method of t','nc effective-mass approach for the nonparabolic band is presented. The splitting, of the spinstates caused by the surface potenlxial is calculated to be small and tE?e resonanceeffect with the hole state in the bulk is found to be very small. The calculatedeffective masses of the occupied subbands at the Fermi level agree quite well withthose measured by Daerr et al. for a wide range of the carrier concentration.
- 社団法人日本物理学会の論文
- 1980-11-15
著者
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Arai Kunihiro
Department Of Physics University Of Tokyo:musashino Electrical Communication Laboratory
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Uemura Yasutada
Department Of Dynamics Faculty Of Engineering Tokyo University
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Takada Yasutami
Department Of Physics University Of Tokyo
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UCHIMURA Naoyuki
Department of Physics,University of Tokyo
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Uchimura Naoyuki
Department Of Physics University Of Tokyo
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Uchimura Naoyuki
Department Of Physics Faculty Of Science University Of Tokyo
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