Acoustic Plasmons in MOS Inversion Layers

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概要

• 論文の詳細を見る

• In a multi-subband system in an inversion layer on III-V semiconductors, there canbe an acoustic plasmon in which carriers of each subband oscillate out of phase. Thedispersion relation and the Landau damping of the mode are disc:ussed in the RPA andare numerically calculated mainly for the case of GaAs. In contrast with bulk multi-carrier systems, each subband is spatially located in tlae different place, which is a greatadvantage for the presence of the acoustic plasmon. NVhen the spatial distance betweensubbands is greater than the screening length, the mode exists as a well-defined one evenif every subband has the same effective mass.

• 社団法人日本物理学会の論文
• 1977-11-15

著者

• Takada Yasutami

  Department Of Physics University Of Tokyo

関連論文

• Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors : I. Subband Structure of InSb
• Mechanism of Superconductivity in Graphite-Alkali Metal Intercalation Compounds
• Subband Structures of N-Channel Inversion Layers on III-V Compounds : A Possibility of the Gate Controlled Gunn Effect
• Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors. II. Inter-Subband Optical Absorption on InSb
• Stress Effects on Electronic Properties of Silicon Inversion Layers
• Theory of Superconductivity in Polar Semiconductors and Its Application to N-Type Semiconducting SrTiO_3
• Acoustic Plasmons in MOS Inversion Layers

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