Stress Effects on Electronic Properties of Silicon Inversion Layers
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概要
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When a uniaxial stress is applied in the [0014 direction to an n-channel inversionlayer at the Si(100)/Si0. interface, electrons transfer from the two valleys locatedin the [1003 direction to those in the [001] direction. The change in the subbandstructure and the quasi-particle properties such as the effective mass are calcu-Bated in the RPA. The Coulomb interaction is important and this transfer isdiscontinuous for low electron concentrations. The cyclott"on resonance is alsocalculated by the use of the Landau Fermi-liquid theory and has a single peakthroughout the transfer, if coo is less than three. The peak shifts from the cyclotronmass of the former valleys to that of the latter ones, which explains experimentsqualitatively.
- 社団法人日本物理学会の論文
- 1978-03-15
著者
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Ando Tsuneya
Department Of Physics Faculty Of Science University Of Tokyo
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Takada Yasutami
Department Of Physics University Of Tokyo
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YAKADA Yasutami
Department of Physics,University of Tokyo
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Yakada Yasutami
Department Of Physics University Of Tokyo
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