First-Principle Calculation of Superconducting Transition Temperature of MOS Inversion Layers
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概要
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The effect of the plasmon and/or the acoustic plasmon on superconductivityis investigated in two-subband systems in MOS inversion laycrs by' nunaericalsolutions of the gap equation in the weak-coupling theory of supercc>nductivity,in which the effective interactions are evaltuated in the RPA. When the carrierconcentration of the system is low, it is shown that the p]asm.on pla)rs the mainrole in the superconductivity, while when it is high, the primary c?ontributioncomes frona the acoustic plasmon. Several criteria to get a high transition term-perature are obtained. The Si(100)/Si0. systena is predicted to show the super-conducting behavior at the temperatures around l mK.
- 社団法人日本物理学会の論文
- 1980-11-15
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関連論文
- Stress Effects on Electronic Properties of Silicon Inversion Layers
- First-Principle Calculation of Superconducting Transition Temperature of MOS Inversion Layers