Theory of Superconductivity in Polar Semiconductors and Its Application to N-Type Semiconducting SrTiO_3

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概要

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• By solving the gap equation numtaerically from the fnrst principles, we haveinvestigated the mechanism of superconductivity in w-type seuaaiconduc:ting SrTi0..The observed transition temperature as a function of the carrier dertsity and theapplied stress is reproduced quite well, when we take account of the j:>lasmon andthe polar optic phonon which relates to the stress-induced ferroelectr.ic transition.In the calculation, the conductiort band of SrTi0. is assumed to be the single-valley model proposed by Mattheiss and all the physical quantities such as theeffective tmass, the dielectric constant and the phonon dispersion relation are takento be the values mtaeasured by experinaents, so that there are no adjttstable para-meters in the theory. The effect of other phonons like the acoustic: one is alsoevaluated and found to be small.

• 社団法人日本物理学会の論文
• 1980-10-15

著者

• Takada Yasutami

  Department Of Physics University Of Tokyo

関連論文

• Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors : I. Subband Structure of InSb
• Mechanism of Superconductivity in Graphite-Alkali Metal Intercalation Compounds
• Subband Structures of N-Channel Inversion Layers on III-V Compounds : A Possibility of the Gate Controlled Gunn Effect
• Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors. II. Inter-Subband Optical Absorption on InSb
• Stress Effects on Electronic Properties of Silicon Inversion Layers
• Theory of Superconductivity in Polar Semiconductors and Its Application to N-Type Semiconducting SrTiO_3
• Acoustic Plasmons in MOS Inversion Layers

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