Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors. II. Inter-Subband Optical Absorption on InSb

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概要

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• Based on the calculated results of the subband structure given in the first paperof the present series, the resonance energies of the inter-subband optical absorp-tion in n-channel inversion layers on the surface of InSb are obtained by thecalculation of the dynamic conductivity in both the parallel and the perpendiculardirections to the surface. Because of the nonparabolicity, the resonance peaks ofthe inter-subband transitions are seen even in the conductivity parallel to thesurface. These peaks give the energy separations between the subbands directly,because the depolarization shift appears only in the conductivity perpendicularto the surface. The calculated results of the resonance energies are comparedwith the experimental ones measured by Koch's group.

• 社団法人日本物理学会の論文
• 1981-06-15

著者

• Takada Yasutami

  Department Of Physics University Of Tokyo

関連論文

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• Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors. II. Inter-Subband Optical Absorption on InSb
• Stress Effects on Electronic Properties of Silicon Inversion Layers
• Theory of Superconductivity in Polar Semiconductors and Its Application to N-Type Semiconducting SrTiO_3
• Acoustic Plasmons in MOS Inversion Layers

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