Subband Structures of N-Channel Inversion Layers on III-V Compounds : A Possibility of the Gate Controlled Gunn Effect

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概要

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• Multi-subband structtures of n-channel inversion layers on the surface of p-type[11-V compounds are calculated by a variational ntethod. Nonparabolicity is takeninto account in the bulk dispersion relation of the f-valley. When the surfaceelectron density is low, electrons occupy only the subbt>.nds in the f-valley,while when it exceeds certaitt critical value, most electrons occupy the groundsubband in the second minimum valleys. From this behavior, the working condi-Lion of the Gunn effect in the system can be changed by applying the gate voltagein the MUS structure. The critical surface electron density ciepends on the chargedensity in the depletion layer' and the surface orientation, but in case of GaAs,it is about 7 >c 10" cm ' for typical operating conditions.

• 社団法人日本物理学会の論文
• 1977-07-15

著者

• Uemura Yasutada

  Department Of Dynamics Faculty Of Engineering Tokyo University

• Takada Yasutami

  Department Of Physics University Of Tokyo

• Takada Yasutomi

  Department Of Physics Faculty Of Science University Of Tokyo

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