Hartree Approximation for the Electronic Structure of a p-Channel Inversion Layer of Silicon M.O.S. (Selected Topics in Semiconductor Physics<特集>) -- (Surface)
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概要
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Self-consistent results of calculation for the electronic structures of a p-channel inversion layer on an n-type silicon are presented. The structure of the sub-bands and the cyclotron mass are calculated within the effective mass approximation which takes the six valence bands belonging to Γ^+_8 and Γ^+_7 into consideration.
- 理論物理学刊行会の論文
- 1975-11-29
著者
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Uemura Yasutada
Department Of Physics Faculty Of Science University Of Tokyo
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Uemura Yasutada
Department Of Dynamics Faculty Of Engineering Tokyo University
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Fusayoshi J.ohkawa
Department Of Physics Hokkaido University
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Ohkawa Fusayoshi
Department Of Physics Faculty Of Science University Of Tokyo
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UEMURA Yasutada
Department of Physics, Faculty of Science University of Tokyo
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