The Change of Carrier Concentration in the Graphite with Static Magnetic Field
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概要
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The change of carrier concentration with static magnetic field in a single crystal of graphite is considered and the Hall coefficient R is discussed from this point of view. The Wallace's model of the two dimensional zone and its orbital quantization proposed by McClure are the starting point of the analysis. By comparing with the Kinchin's experiment we propose that the acceptor levels exist at 11 × 10^<-3>eV. above the bottom of the conduction band and their concentration is 1.7 × 10^<18>/c.c.. As to the Wallace's resonance integral γ_0 we estimate its value as 1.43eV. semiempirically. The ratio of the mobilities of two carriers b = μ_p/μ_n = 0.87 gives the best fit of R at the low temperature under the strong magnetic field. By using these resonable values of the parameters the Hall coefficient R is plotted as the function of temperature and magnetic field. The agreement with experimental data may be good except the low field region. The origins of discrepancy are discussed.
- 社団法人日本物理学会の論文
- 1958-04-05
著者
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Inoue Masaharu
Department Of Physics Tokyo Metropolitan University
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Uemura Yasutada
Department Of Dynamics Faculty Of Engineering Tokyo University
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