Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si. : I. Electric Break Through

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概要

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• The extended zone effective mass equation as proposed in the preceding paper isapplied to the vally splitting in an o-channel (100) inversion layer of Si, and the valleysplitting is explained theoretically for the first time. The splitting turns out to be aboutAE= 0.15 x (V...-l- 32/ 1 1 A'....) meV for the carrier concentrations "inv and 7V.... of theinversion and depletion layers which are in 10" cm ' unit. The mechanism of thesplitting is the electric break throttgh, and two kinds of break throtngh play a role in thissystem. The estimated splitting is too small to be observed, and it is suggested that thesplitting will be greatly enhanced by many-body effects under a high magnetic field.However the appearance of the characteristic cusps in the measured line shapes of theSchubnikov-de Haas oscillation confirms that the theory gives the correct magnitude ofthe valley splitting without the enhancement by man3z-body effects.

• 社団法人日本物理学会の論文
• 1977-09-15

著者

• OHKAWA Fusayoshi

  Institute for Solid State Physics The University of Tokyo

• Uemura Yasutada

  Department Of Dynamics Faculty Of Engineering Tokyo University

• J.ohkawa Fusayoshi

  Institute For Solid State Physics University Of Tokyo

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