Temperature Dependence of Electrical Resistivity of Metals
スポンサーリンク
概要
- 論文の詳細を見る
A general formula for the electrical resistivity of metals is obtained. Thisformula is applicable to any metals. When it is applied to crystalline metals,the usual phonon scattering resistivity is derived. When it is applied to amorphousor disordered metals, an increase in T' is predicted at low temperatures in addi-lion to the increase in T'. The coefficient of the 7"-term is shown to be proportionalto the residual resistivity. For highly resistive metals, it is shown that the usualphonon scattering is suppressed, and that the temperature dependence of theresistivity becomes small : A kind of random phase model for the resistivity ispresented. It is also shown that the resistivity due to impurity scattering increasesin T" at low temperatures and increases in ( -T) ' at high temperatures. Thetheory can also explain the saturation behavior of the resistivity with increasingtemperatures observed in J-15 compounds.
- 社団法人日本物理学会の論文
- 1978-04-15
著者
-
OHKAWA Fusayoshi
Institute for Solid State Physics The University of Tokyo
-
J.ohkawa Fusayoshi
Institute For Solid State Physics University Of Tokyo
関連論文
- 14. Kondo Effect and Localization in Two-Dimensional Systems(Theories,II Two Dimensional Systems)
- Kondo Effect in Disordered Two-Dimendional Systems
- Theory of the Electrical Resistivity of Amorphous Metals
- Random Phase Model for the Electrical Resistivity of Highly Resistive Metals : Negative Temperature Coefficients
- Temperature Dependence of Electrical Resistivity of Metals
- Anisotropic Superconductivity in the Kondo Lattice
- On Attractive Interaction between f Electrons in Valence Fuuctuating Systems
- Fermi Liquid Description of Periodic Anderson Hamiltonian
- A Model of Valence Fluctuating Systems of Metallic Rare-Earth Compounds
- Superconductivity of Heavy Fermions in Valence Fluctuating Systems
- Kondo Effect and Magnetoresistance in Weakly Localized Regime
- Ordered States in Periodic Anderson Hamiltonian with Orbital Degeneracy and with Large Coulomb Correlation
- A Single-Site Picture of Valence Fluctuation in Periodic Anderson Hamiltonian with Large Coulomb Correlation
- On Local Density of States in Anderson Localezed Systems
- Orbital Antiferromagnetism in CeB_6
- Ground State Properties of an Anderson Hamiltonian with Splitting Due to Crystal Field and Spin-Orbit Interactions
- Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si. : I. Electric Break Through
- Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si. : III. Enhancement of Splittings by Many-Body Effects