Dielectric Properties of Impurity Doped Polyethylene
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概要
- 論文の詳細を見る
Two groups of dielectric absorption are observed in the impurity (surfactant=metal salt of imidazoline type amphoteric agent) doped high and low density polyethylene. One of them has the loss maximum dependent on the amount of the imputed to the relaxation of a dipole orientation of the impurity. Another shows an odd behavior named retrogressing phenomenon near the melting point of polyethylene (90℃ for low density polyethylene and 120℃ for high density polyethylene) and can not be interfacial polarization is proposed assuming a model, crystalline part of polyethylene being covered with a surfactant dense layer. This model is justified semi-quantitatively by the Miles and Robertson theory. The retrogressing phenomenon is explained by the change of the layer thikness that affects the dielectric relaxation time of this model.
- 社団法人日本物理学会の論文
- 1969-12-05
著者
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Ieda Masayuki
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Kosaki Masamitsu
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Kosaki Masamitsu
Department Of Electrical Of Engineering Nagoya University
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