Impurity Conduction in Ti-Doped VO_2 Studied by Microwave Frequency Conductivity
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概要
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The dc and 24 GHz conductivities of VO_2 containing various amounts of Ti have been measured below the semiconductor-to-metal transition point. Above 290 K the activation energy for dc conductivity is not affected by the small amounts of Ti impurity and the 24 GHz conductivity coincides with the dc conductivity. The pronounced frequency dispersion of conductivity is observed at low temperature, where the impurity conduction arises from hopping motion of electrons between impurity sites. The 24 GHz conductivity can be explained as a function of temperature by the formula expressing the dielectric loss due to the hopping diffusion of electrons between pair centers given by Pollak.
- 社団法人日本物理学会の論文
- 1972-01-05
著者
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GOTO Tsuneaki
Department of Physics, Faculty of Science, Chiba University
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NISHIMURA Katsuyuki
Department of Radiological Sciences, Ibaraki Prefectural University of Health Sciences
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Nihsimura Katsuyuki
Department Of Applied Physics Tokyo Institute Of Technology
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Kawakubo Tatsuyuki
Department Of Applied Physics Tokyo Institute Of Technology
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Goto Tsuneaki
Department Of Applied Physics Tokyo Institute Of Technology:(present Address) The Research Institute
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KABASHIMA Shigeharu
Department of Applied Physics, Tokyo Institute of Technology
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Kabashima Shigeharu
Department Of Applied Physics Tokyo Institute Of Technology
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Kawakubo Tatsuyuki
Deparment Of Applied Physics Tokyo Institute Of Technology
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Goto Tsuneaki
Department Of Applied Physics Tokyo Institute Of Technology
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Nishimura Katsuyuki
Department Of Accelerator And Medical Physics Research Center For Particle Therapy National Institut
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