Relaxation Process in Electron Spin Resonance of Ti-Doped VO_2
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概要
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In order to investigate the spin relaxation mechanism in Ti-doped VO_2 in relation to the itineracy of electrons associated with Ti impurities substituted for V^<4+>, the linewidth and line intensity of ESR absorption at 24 GHz have been measured on samples doped with various concentrations of Ti in a temperature range between 4.2 and 250 K. The spectrum with hfs lines is observed at low concentration of Ti, while a single narrowed line of absorption is found at higher concentration. The temperature dependence of linewidth and line intensity of this single absorption line are discussed with respect to the staying time of electrons in the impurity state and their motions between impurity centers. The hopping frequency of electrons and the staying time in the impurity state are determined.
- 社団法人日本物理学会の論文
- 1972-06-05
著者
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GOTO Tsuneaki
Department of Physics, Faculty of Science, Chiba University
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Nihsimura Katsuyuki
Department Of Applied Physics Tokyo Institute Of Technology
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Kawakubo Tatsuyuki
Department Of Applied Physics Tokyo Institute Of Technology
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Goto Tsuneaki
Department Of Applied Physics Tokyo Institute Of Technology:(present Address) The Research Institute
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KABASHIMA Shigeharu
Department of Applied Physics, Tokyo Institute of Technology
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Kabashima Shigeharu
Department Of Applied Physics Tokyo Institute Of Technology
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Kawakubo Tatsuyuki
Deparment Of Applied Physics Tokyo Institute Of Technology
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Goto Tsuneaki
Department Of Applied Physics Tokyo Institute Of Technology
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