High-Pressure Study of Photoluminescence Spectra in Magnetic Semiconductor EuSe
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概要
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The pressure dependence of the photoluminescence spectra in EuSe crystals has been studied up to 2.0 GPa at 77 K and 1.8 K using a diamond anvil cell. At 77 K, the pressure derivative of the peak position of the photoluminescence band is found to be -96 meV/GPa, which coincides with the pressure derivative of the absorption edge. The result supports the interpretation that the emitting state of the photoluminescence is the 5d(t_<2g>) state. At 1.8 K, we have observed sharp decrease of the photoluminescence intensity and redshift of the peak energy of about 50 meV with the increase of the pressure beyond 0.4〜0.5 GPa. Observed anomalies are interpreted in terms of the pressure-induced phase transition from the antiferromagnetic to the ferromagnetic phase, where the magnetic polaron effect plays a significant role.
- 社団法人日本物理学会の論文
- 1993-05-15
著者
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Kobayashi Michihiro
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Suzuki Takashi
Department Of Biochemistry University Of Shizuoka School Of Pharmaceutical Sciences:core Research Fo
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Akimoto R
Osaka Univ. Toyonaka Jpn
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Kobayashi Michihiro
Department Of Agricultural Chemistry Faculty Of Agriculture Kyoto University
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Akimoto Ryouichi
Department of Material Physics, Faculty of Engineering Science, Osaka University
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Suzuki Takashi
Department Of Anesthesia Showa University Northern Yokohama Hospital
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Suzuki Takashi
Department Of Anatomic Pathology Tohoku University School Of Medicine
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