Far-Infrared Absorption Due to the Two-Phonon Difference Process in Si
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概要
- 論文の詳細を見る
The absorption spectrum caused by the two-phonon difference process in Si has been found in the wavenumber region from 80 to 400 cm^<-1>. The absorption coeificient is below 0.5 cm^<-1> at room temperature. Peaks of the spectrum, which have been observed at 265, 313 and 381 cm^<-1>, are attributed to the phonons at L and X points in the Brillouin zone. Owing to the high symmetry of the dispersion relation of the phonons at these points, the peaks are found in pairs with those of the two-phonon sumnlation process of the same phonons. Peaks observed at 120 and 152 cm^<-1> are due to accidental singularities which occur only in the difference energy surface of two phonons.
- 社団法人日本物理学会の論文
- 1981-11-15
著者
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ISHIGAME Mareo
Research Institute for Scientific Measurements,Tohoku University
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Ikezawa Mikihiko
Department Of Physics The Faculty Of Science Tohoku University
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Ikezawa Mikihiko
Department Of Physics Faculity Of Science Tohoku University
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Ishigame Mareo
Research Institute For Scientific Measurements Tohoku University
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