Negative Magnetoresistance of P-Type Silicon in Impurity Conduction Range at Microwave Frequencies
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概要
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The microwave conductivity of silicon containing less than 10^<17>cm^<-3> impurities was studied previously in 9000 Mc region at low temperatures. The present paper deals with an effect of a magnetic field on the microwave conductivity due to the hopping process in B-doped p-type silicon. Since the conductivity due to the direct absorption process vanishes at high power levels as was discussed in the preceding paper, the comparatively high input microwave power was used to measure only the hopping conductivity, and samples having higher impurity concentrations were measured in the present experiment. The boron impurity concentration ranges from 5.5×10^<17> to 2.5×10^<18>cm^<-3>. The activation energies of dc impurity conduction of these samples were measured. From these results, it can be said that the dc conductivities in the samples 1, 2 and 3 come from the hopping motion of carries and the samples 4 and 5 seem to be in the transition range from non-metallic to metallic conductions. Temperature dependence of the microwave conductivity of these samples resembles the one that was reported previously. A large negative magnetoresistance at 9000 Mc was observed in all the samples at low temperatures. In Fig. 1, the magnetoconductance σ_H/σ_0 of sample 3 is plotted against magnetic field strength. The microwave conductivity increases monotonically with magnetic field, but it seems to come to a saturation at around 1O kilo-oersteds. The temperature dependence of σ_H/σ_0 is also shown in Fig. 2. The magn1tude of the magnetoresistance increases as the temperature is decreased and is roughly proportional to 1/T. It reaches up to 70 per cent at l.3°K in sample 3. Although the magnitude is different from sample to sample, it exceeds 20 per cent in all the samples.
- 社団法人日本物理学会の論文
- 1964-07-05
著者
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Kobayashi Mineo
Department Of Applied Physics University Of Tokyo
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Kobayashi Mineo
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Tanaka Shoji
Department Of Applied Physics Faculty Fo Engineering University Of Tokyo
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TANAKA Shoji
Department of Applied Physics, Faculty of Engineering University of Tokyo
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