高精度バイアス回路によるパワーMOSFETのON抵抗安定化に関する研究

概要

論文の詳細を見る
Power electronic devices are widely used in industries and commercial fields. Recently high-speed M0S deviceshave been exchanged instead of SCR. In this paper, we design a bias circuit of a MOS switch with high accuracy.　The circuit for stabilizing on-resistance of the MOS FET at input voltage 3 to 5 [V] and temperature -50 to 85[℃] is designed. The bias circuit consists of a CR oscillator, a charge pump circuit with the 4-time voltage anda constant voltage circuit. A CR oscillator contains resistors, capacitors and a CMOS inverter. The oscillationfrequency is determined by the values of C and R. By using the oscillation frequency as a control clock, acharge pump circuit with the 4-time voltage is operated as expected. Using the 4-time voltage of the chargepump circuit, the constant voltage circuit holds the output voltage of 9.9 [V] without influence of the inputvoltage and a room temperature. Finally, the designed MOS switch has a low and accurate on-resistance. Theirperformances are verified using the HSPICE simulator with 0.5μm CMOS process device parameters.
宮崎大学の論文