SiドープSiO_2薄膜の欠陥構造

概要

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SiO_2 films doped with Si-nanocrystal deposited on Si substrate by co-sputtering of Si and SiO_2 have been studied using electron spin resonance (ESR) and photoluminescence (PL) methods. The ESR analysis revealed the presence of three kind of paramagnetic defect centers in the film after annealing above 900℃ in argon (Ar) atmosphere, i.e. (1) Si dangling bond in Si-nanocrystal (a-center : g=2.006), (2) Si dangling bond at the interface between Si-nanocrystal and SiO_2(P_b-center : g=2.003), and (3)electrons trapped at the localized states clse to the conducting band edge in Sinanocrystal (P_(ce)-center : g=1.998). Moreover, visible light emission was observed in the annealed sample from the PL measurement. Both the PL intensity and the ESR signal intensity of the P_(ce)-center increased with increasing annealing temperature. These results indicate that the P_(ce)-center is strongly associated with the emission center.