高周波プラズマCVD法を用いたガラス基板上へのカーボンナノチューブの作製と評価(<特集>電気電子工学)

概要

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The well-aligned carbon nanotube was grown on a glass substrate by using the RF plasma CVD equipment. Fe thin film was used as catalysis of carbon nanotube growth. Acetylene gas diluted in hydrogen at 10 % was used as source gas. The RF power was 100 W. The growth pressure and the temperature were 0.7 Pa and 550℃, respectively. The well-aligned carbon nanotube with length of 5 μm was grown on the glass substrate. The density of the carbon nanotube on the glass substrate was 1200/μm^2 : The TEM investigation suggested that the carbon nanotube is 15 and 7 nm in an outside and an inside diameter, respectively. Moreover, the electron diffraction pattern indicated that the carbon nanotube had graphite structure. Field emission characteristic for the CNT was also investigated.
東海大学の論文
2005-03-31