ホットウォールタイプLPCVD法をもちいたSi上への単結晶3C-SiC成長技術

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A heteroepitaxial growth of 3C-SiC on Si (111) substrate in a hot-wall type LPCVD reactor has been investigated. To obtain a high quality SiC film on Si substrate, carbonization processes of Si surface with C_2H_2 flow were studied at 1000℃. Single crystalline carbonized layer (3C-SiC) was formed on Si substrate during a heating up process with C_2H_2 supply, which was found to be a necessary condition to sealing porous defects of the carbonized layer. After the carbonization process of Si substrate, SiC growth processes with alternating gas supplies of SiH_2Cl_2 and C_2H_2 were performed in the temperature range of 750-1050℃. The growth rate of the SiC film increased at temperatures above 900℃ with H_2 supply during the growth process, while a constant growth rate (4.8A/cycle) without H_2 flow was obtained. The characteristic of the growth rate of the SiC film can be understood by taking into account the decomposition process of adsorbed SiCl_2 by H_2 on the surface of the substrate. Single crystalline 3C-SiC film has been obtained at 1000℃ by keeping on H_2 supply during the growth process. The constant growth rate without H_2 supply suggested that the atomic level epitaxy might be realized, though the crystallinity of the grown SiC film was not so excellent as that obtained with H_2 supply. The defect structure of grown SiC film has been studied by the ESR (electron spin resonance) method. Three paramagnetic defects, that is, Si-dangling bonds (g=2.0055,⊿H_<pp>=5.5 Oe) in the Si amorphous region, Si-dangling bonds with C atom neighbors (g=2.0033,⊿H_<pp>=3.0 Oe), and C-dangling bonds with C atom neighbors (g=2.0030,⊿H_<pp>=15.0 Oe) were observed by ESR analysis.
東海大学の論文

ホットウォールタイプLPCVD法をもちいたSi上への単結晶3C-SiC成長技術

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