イオンビームアシスト蒸着法によるA1N_x膜の製作

概要

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Optimum ion-irradiation conditions for reactive ion-beam assisted deposition of aluminum-nitride films have been investigated. Either nitrogen or hydrogen-containing nitrogen (N_2 : H_2=80% : 20%) ions have been irradiated during Al evaporation to form aluminum nitrides. The films have been analyzed by optical absorption in visib1e-ultraviolet region, FT-IR and ESCA. Aluminum oxynitride films are supposed to be grown by irradiation of nitrogen-ions, whereas the formation of aluminum nitride films by irradiation of hydrogen-containing nitrogen ions has been confirmed. However the latter films contain significant amount of oxygen as an impurity. The best irradiation conditions are as follows : Ion acceleration energy, 100eV; the arrival rate of (N_2^++H_2^+) ions to Al atoms, about 1.0. Hydrogen atoms or ions are supposed to be effective to suppress the oxygen contamination as well as to accelerate the nitrization reaction.
東海大学の論文