Analysis of magnetic microstructure in MRAM bits by electron holography and Lorentz microscopy
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概要
- 論文の詳細を見る
- 2006-01-01
著者
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SHINDO Daisuke
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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MURAKAMI Yasukazu
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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Shindo Daisuke
Institute For Advanced Materials Processing Tohoku University
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Murakami Yasukazu
Institiute For Advanced Materials Processing Tohoku University
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Lee Jang-eun
Process Development Team Memory Division Samsung Electronics Co. Ltd
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Park Gyeong-su
Analytical Engineering And Microelectronics Lab. Samsung Advanced Institute Of Technology
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Park Gyeong-su
Analytical Engineering Center Samsung Advanced Institute Of Technology
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Park Jong-bong
Analytical Engineering Center Samsung Advanced Institute Of Technology
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SONG In-Yong
Analytical Engineering Center, Samsung Advanced Institute of Technology
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BAE Jun-Soo
Process Development Team, Memory Division, Samsung Electronics Co., Ltd
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YOO Jeong-Ho
Institute of multidisciplinary Research for Advanced Materials, Tohoku University
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Bae Jun-soo
Process Development Team Memory Division Samsung Electronics Co. Ltd
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Song In-yong
Analytical Engineering Center Samsung Advanced Institute Of Technology
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Yoo Jeong-ho
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Shindo Daisuke
Institiute For Advanced Materials Processing Tohoku University
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- PREFACE
- Magnetic Domain Structures of Nd-Fe-B based Permanent Magnets Studied by Electron Holography and Lorentz Microscopy
- Magnetization Process in Sm_2Fe_N_3 Fine Powders Studied Using Lorentz Microscopy and Electron Holography
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