Effect of Electron Beam Irradiation on Si Surface Cleaning in Ultrahigh-Vacuum System
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概要
- 論文の詳細を見る
Effect of electron beam irradiation (15 kV) on Si surface cleaning prior to epitaxial growth in an ultrahigh-vacuum system was investigated. A CaF_2 film was epitaxially grown on the Si surface, and the interface was observed by high-voltage electron microscopy. Amorphous layers, which were observed in the interface prepared with conventional thermal treatment at 750℃, became much smaller with electron beam irradiation after the thermal treatment. Based on the electron microscope observation, the effect of electron beam irradiation on Si surface cleaning was briefly discussed.
- 社団法人応用物理学会の論文
- 1995-05-01
著者
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Shindo Daisuke
Institute For Advanced Materials Processing Tohoku University
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Miura Hiroshi
General Electronics Research And Development Center Ricoh Co. Ltd.
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OHTAKA Kouichi
General Electronics Research and Development Center, RICOH Co., Ltd.
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Shindo Daisuke
Institiute For Advanced Materials Processing Tohoku University
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Ohtaka Kouichi
General Electronics Research And Development Center Ricoh Co. Ltd.
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- PREFACE
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