A Study of Electrical Damage to a-Si:H Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
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YEOM Geun-Young
Department of Materials Engineering, Sungkyunkwan University
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Lim Jong-hyuk
Department Of Electrical And Computer Engineering Hanyang University
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Lim Jong-hyuk
Department Of Materials Science And Engineering Sungkyunkwan University
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Yeom Geun-young
Department Of Materials Sciences & Engineering Sungkyunkwan University
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Lee Yong-hyuk
Department Of Materials Sciences & Engineering Sungkyunkwan University
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Kyung Se-jin
Department Of Materials Sciences & Engineering Sungkyunkwan University
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Yeom Geun-young
Department Of Materials Engineering Sungkyunkwan University
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Lee Yong-hyuk
Department Of Materials Engineering Sungkyunkwan University
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Kyung Se-Jin
Department of Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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- A Study of Electrical Damage to a-Si:H Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
- The Effect of N2 Flow Rate in He/O2/N2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge