Characteristics of Ag Etching using Inductively Coupled Cl2-based Plasmas

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In this study, Ag thin films deposited on glass were etched using inductively coupled Cl2-based plasmas and the effects of various Cl2-based gas mixtures on the formation of reactive byproducts affecting Ag etching were investigated. When Cl2-based gas mixtures were used with Ar and O2, due to the very low vapor pressure of the etch products, thick etch products remaining on the substrate could be observed after the etching. However, these etch products were easily removed during the photoresist stripping by a photoresist stripper. In particular, when O2 was added to Cl2, higher Ag removal rates during the photoresist stripping than those by pure Cl2 or O2 could be obtained. These results are interpreted as the formations of more porous and reactive etch reaction products when O2 was added to Cl2. The Ag removal rates by Cl2/O2/50%N2 estimated after the photoresist stripping were higher than those by Cl2/O2/50%Ar and the use of Cl2/O2/50%Ar resulted in higher Ag etch rates than those by Cl2/50%Ar. Therefore, the physical and chemical properties of the etch products formed by the specific gas mixture appear to be important in removing Ag for Cl2-based plasmas.
2003-01-15