The Effect of N2 Flow Rate in He/O2/N2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge
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概要
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In this study, the effects of N2 flow rate in the He/O2/N2 gas mixture on the characteristics of a pin-to-plate dielectric barrier discharge (DBD) having the size of $100\,\text{mm} \times 1000\,\text{mm}$ have been investigated for the application to flat panel display processing such as photoresist ashing. The pin-to-plate DBD showed about 70–120% higher photoresist ashing rate at the same applied voltage compared to the conventional DBD. The addition of 3 slm of N2 to He(10 slm)/O2(3 slm) showed the highest photoresist ashing rate of about 580 nm/min for the pin-to-plate DBD at 12 kV of AC voltage. The increase of N2 flow rate in He/O2 gas mixture up to 3 slm appeared to increase the density of N2+ ions and N2 metastables while the oxygen atomic density appeared to decrease continuously. The increase of photoresist ashing rate with the increase of N2 flow rate up to 3 slm was related to the increase of the substrate surface temperature by the increased collision of N2+ ions and N2 metastables with the substrate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-02-01
著者
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Jeong Chang-hyun
Department Of Materials Science And Engineering Sung Kyun Kwan University
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Yeom Geun-young
Department Of Materials Engineering Sungkyunkwan University
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Lee Yong-hyuk
Department Of Materials Engineering Sungkyunkwan University
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Jeong Chang-Hyun
Department of Materials Sciences & Engineering, Sungkyunkwan University, Suwon, Korea
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Kyung Se-Jin
Department of Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Kyung Se-Jin
Department of Materials Sciences & Engineering, Sungkyunkwan University, Suwon, Korea
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Lee Yong-Hyuk
Department of Materials Sciences & Engineering, Sungkyunkwan University, Suwon, Korea
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