Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition

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概要

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• Transparent conductive tin oxide (TO, SnO2) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O3. The properties of TO films have been changed with the gas flow rate (oxygen, oxygencontaining ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reducedsubstrate temperature significantly and the resistivity while maintaining the same growth rate. The films preparedusing ozone showed resistivity ranging from 10-2 to 10-3 Ωcm, and ranging mobility from 10.5 to 13.7 cm2/Vs.

• 1999-05-15

著者

• Bae Jeong-woon

  Department Of Materials Engineering Sungkyunkwan University

• Song Kook-hyun

  Dept. Of Inorganic Chemistry National Institute Of Technology And Quality

• Yeom Geun-young

  Department Of Materials Engineering Sungkyunkwan University

• Ko Young-wook

  Lcd Division Hyundai Electronics Industries Co. Ltd

• Lee Sang-woon

  Department Of Chemistry Myongji University

• Park Kwang-ja

  Dept. Of Inorganic Chemistry National Institute Of Technology And Quality

• Song Kook-Hyun

  Dept. of Inorganic Chemistry, National Institute of Technology and Quality, Kwacheon, Kyunggi-do, 427-010,Korea

• Park Jung-Il

  Dept. of Inorganic Chemistry, National Institute of Technology and Quality, Kwacheon, Kyunggi-do, 427-010,Korea

• Yeom Geun-Young

  Department of Materials Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, Korea

• Park Kwang-Ja

  Dept. of Inorganic Chemistry, National Institute of Technology and Quality, Kwacheon, Kyunggi-do, 427-010,Korea

関連論文

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• A Study of Electrical Damage to a-Si:H Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
• The Effect of N2 Flow Rate in He/O2/N2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge

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