Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-05-15
著者
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Yeom G‐y
Sungkyunkwan Univ. Kyunggi‐do Kor
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BAE Jeong-Woon
Department of Materials Engineering, Sungkyunkwan University
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LEE Sang-Woon
Department of Chemistry, Myongji University
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SONG Kook-Hyun
Dept. of Inorganic Chemistry, National Institute of Technology and Quality
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PARK Jung-II
Dept. of Inorganic Chemistry, National Institute of Technology and Quality
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PARK Kwang-Ja
Dept. of Inorganic Chemistry, National Institute of Technology and Quality
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KO Young-Wook
LCD Division, Hyundai Electronics Industries Co., Lid.
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YEOM Geun-Young
Department of Materials Engineering, Sungkyunkwan University
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Park J‐i
Kwangwoon Univ. Seoul Kor
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Bae Jeong-woon
Department Of Materials Engineering Sungkyunkwan University
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Ko Y‐w
Lcd Division Hyundai Electronics Industries Co. Lid.
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Song Kook-hyun
Dept. Of Inorganic Chemistry National Institute Of Technology And Quality
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Yeom Geun-young
Department Of Materials Engineering Sungkyunkwan University
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Park K‐j
Dept. Of Inorganic Chemistry National Institute Of Technology And Quality
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Ko Young-wook
Lcd Division Hyundai Electronics Industries Co. Ltd
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Lee Sang-woon
Department Of Chemistry Myongji University
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Park Kwang-ja
Dept. Of Inorganic Chemistry National Institute Of Technology And Quality
関連論文
- Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition
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- A Study of Electrical Damage to a-Si:H Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
- The Effect of N_2 Flow Rate in He/O_2/N_2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge
- Effects of H_2 Addition in Magnetized Inductively Coupled C_2F_6 Plasma Etching of Silica Aerogel Film
- Effects of Etch-Induced Damage and Contamination on the Physical and Electrical Properties of Cobalt Silicides
- Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching
- Etch Properties of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)
- Properties and Applications of a Modified Dielectric Barrier Discharge Generated at Atmospheric Pressure
- Effects of Post Annealing and Oxidation Processes on the Removal of Damage Generated during the Shallow Trench Etch Process
- Characteristics of Ag Etching using Inductively Coupled Cl_2-based Plasmas
- Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition
- Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching
- High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas
- Characteristics of Ag Etching using Inductively Coupled Cl2-based Plasmas
- A Study of Electrical Damage to a-Si:H Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
- The Effect of N2 Flow Rate in He/O2/N2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge