Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-01-15

著者

• YEOM Geun-Young

  Department of Materials Engineering, Sungkyunkwan University

• Park Sang-duk

  Department Of Materials Engineering Sungkyunkwan University

• Yoon Byoung-young

  Department Of Materials Science & Engineering Sungkyunkwan University

• MIN Kyung-Suk

  Department of Materials Science & Engineering, Sungkyunkwan University

• LEE Do-Haing

  Department of Materials Science & Engineering, Sungkyunkwan University

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• Effects of H_2 Addition in Magnetized Inductively Coupled C_2F_6 Plasma Etching of Silica Aerogel Film
• Effects of Etch-Induced Damage and Contamination on the Physical and Electrical Properties of Cobalt Silicides
• Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching
• Etch Properties of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)
• Effects of Post Annealing and Oxidation Processes on the Removal of Damage Generated during the Shallow Trench Etch Process
• Characteristics of Ag Etching using Inductively Coupled Cl_2-based Plasmas
• Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching
• Characteristics of Ag Etching using Inductively Coupled Cl2-based Plasmas

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