Etch Properties of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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YEOM Geun-Young
Department of Materials Engineering, Sungkyunkwan University
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Lee Jae-won
Photonics Semiconductor Lab. Samsung Advanced Institute Of Technology
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Lee Weon-jeong
Department Of Materials Engineering Sungkyunkwan University
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Yeom Geun-young
Department Of Materials Engineering Sungkyunkwan University
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Kim Tae-il
Photonics Semiconductor Lab. Samsung Advanced Institute Of Technology
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Kim Hyeon-soo
Department Of Materials Engineering Sungkyunkwan University
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- Etch Properties of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)
- Properties and Applications of a Modified Dielectric Barrier Discharge Generated at Atmospheric Pressure
- Effects of Post Annealing and Oxidation Processes on the Removal of Damage Generated during the Shallow Trench Etch Process
- Characteristics of Ag Etching using Inductively Coupled Cl_2-based Plasmas
- Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition
- Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching
- High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas
- Characteristics of Ag Etching using Inductively Coupled Cl2-based Plasmas
- A Study of Electrical Damage to a-Si:H Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
- The Effect of N2 Flow Rate in He/O2/N2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge