スポンサーリンク
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation | 論文
- Mechanism of Chemical Mechanical Planarization Induced Edge Corrosion of Copper Line for Cu/Low-k SiOC Interconnects
- Efficient Improvement on Device Performance for sub-90nm CMOSFETs
- An Efficient Mobility Enhancement Engineering on 65nm FUSI CMOSFETs using a Second CESL Process
- Systematic Analysis and Modeling of On-Chip Spiral Inductors for CMOS RFIC Application
- Mobility Modulation Technology Impact on Device Performance and Reliability for sub-90nm SOI CMOSFETs
- The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs
- Effects of hot carriers on DC and RF performances of deep submicron PMOSFET for low-power and high frequency applications
- Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor
- New Observations on Hot-Carrier Degradation in 0.1 μm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors : Semiconductors
- Efficient Suppression of Substrate Noise Coupling in Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
- Impact of Zr/Hf Ratio on Reliability of HfZrO_x Gate Dielectric
- Impacts of Layout Dimensions and Ambient Temperatures on Silicon Based On-Chip RF Interconnects
- Effect of Etch Stop Layer Stress on Negative Bias Temperature Instability of Deep Submicron p-Type Metal–Oxide–Semiconductor Field Effect Transistors with Dual Gate Oxide
- A study of deposition single crystal SiCN thin film on porous silicon for ultraviolet light detecting applications
- Significantly Enhancing Luminance of Organic Light-Emitting Diodes (OLEDs) with Doping Iodine and Nitrogen Treatment
- Investigation and Modeling of Stress Interactions on 90nm SOI CMOS with Various Mobility Enhancement Approaches
- Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses
- Significantly Improved Luminance of Organic Light-Emitting Diodes by Doping Iodine and Nitrogen Treatment
- Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor
- Improving Boron-Induced Retardation of Metal-Induced Lateral Crystallization Length by Hydrogen Treatment