Significantly Improved Luminance of Organic Light-Emitting Diodes by Doping Iodine and Nitrogen Treatment

スポンサーリンク

概要

• 論文の詳細を見る

• Simultaneously doping iodine (I2) inorganic dopants and nitrogen (N2) treatment on the hole transport layer (HTL) to promote the output luminance of Al/tris(8-hydroxyquinoline) aluminum (Alq3)/N,N$'$-diphenyl-N,N$'$bis (3-methylphenyl)-1,1$'$-biphenyl-4,4$'$-diamine (TPD)/indium tin oxide (ITO) organic light-emitting diodes (OLEDs) have been studied in detail. Experimental results show that the output luminance can be significantly increased by up to 950 and 560% in magnitude at biases of 8 and 10 V, respectively. We attribute this marked increase to significant morphological changes occurring in the HTL because of the dinitrogen occlusion and I2-dopant-generated guest hopping sites. The morphological changes improve the HTL/Alq3 interface, whereas the interfering action between guest and host hopping sites lowers holes mobility, thus increasing the output luminance of the OLEDs.

• 2007-04-30

著者

• Chou Tse-heng

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Lin Chun-yu

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Lin Fu-sheng

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Hou Shui-ching

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Fang Yuen-kuen

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Chou Tse-Heng

  VLSI Technology Laboratory, Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan

• Lin Fu-Sheng

  VLSI Technology Laboratory, Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan

• Lin Chun-Yu

  VLSI Technology Laboratory, Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan

• Fang Yuen-Kuen

  VLSI Technology Laboratory, Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan

• Chen Shih-Fang

  Department of Electronic Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan 710, Taiwan

• Hou Shui-Ching

  VLSI Technology Laboratory, Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan

関連論文

• Mechanism of Chemical Mechanical Planarization Induced Edge Corrosion of Copper Line for Cu/Low-k SiOC Interconnects
• A study of deposition single crystal SiCN thin film on porous silicon for ultraviolet light detecting applications
• Significantly Enhancing Luminance of Organic Light-Emitting Diodes (OLEDs) with Doping Iodine and Nitrogen Treatment
• Significantly Improved Luminance of Organic Light-Emitting Diodes by Doping Iodine and Nitrogen Treatment
• Improving Boron-Induced Retardation of Metal-Induced Lateral Crystallization Length by Hydrogen Treatment
• A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal–Oxide–Semiconductor Field Effect Transistors

スポンサーリンク