A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal–Oxide–Semiconductor Field Effect Transistors

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概要

• 論文の詳細を見る

• Based on the resultant solution of two-dimensional (2D) Poisson's equation in silicon region, a new, compact and analytical model for nanoscale fully depleted, symmetrical tri-material gate stack double-gate (STMGSDG) metal–oxide–semiconductor field-effect transistor (MOSFET) has been developed. The STMGSDG MOSFET exhibits significantly reduced short-channel effects (SCEs) when compared with the symmetrical single-material gate stack double-gate (SSMGSDG) MOSFET. It is found that the threshold voltage roll-off for the fully depleted STMGSDG MOSFET can be effectively reduced by using both thin Si film and thin gate oxide. Besides, the high ratio of large work function of metal gate 1 ($L_{1}$) to the total gate can efficiently suppress the drain-induced barrier lowering (DIBL) and maintain the low threshold voltage degradation. This study not only presents a precise 2D analytical model of the surface potential and threshold voltage, but also discusses the electric field distribution in the channel region, subthreshold swing and subthreshold current for the STMGSDG MOSFET. The new model is verified to be in a good agreement with numerical simulation results over a wide range of the device parameters.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-10-25

著者

• Chen Mei-Li

  Department of Electro-Optical Engineering, Southern Taiwan University, Tainan 710, Taiwan

• Lin Wen-Kai

  Department of Electronic Engineering, I-Shou University, Kaohsiung County 840, Taiwan, R.O.C

• Lin Wen-Kai

  Department of Electronic Engineering, Southern Taiwan University, Tainan 710, Taiwan

• Chen Shih-Fang

  Department of Electronic Engineering, Southern Taiwan University, Tainan 710, Taiwan

• Chen Shih-Fang

  Department of Electronic Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan 710, Taiwan

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• Application of Inorganic/Organic Stacked Hole Transporting Layer in Organic Solar Cells
• A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal–Oxide–Semiconductor Field Effect Transistors
• A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

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