Improving Boron-Induced Retardation of Metal-Induced Lateral Crystallization Length by Hydrogen Treatment
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概要
- 論文の詳細を見る
In this letter, we use hydrogen treatment to improve boron-dopant-induced growth length retardation in metal-induced lateral crystallization (MILC) of amorphous silicon film (a-Si). Compared with the case without hydrogen treatment, a scanning electron microscope (SEM) micrograph shows that the grown poly-silicon length in boron-doped a-Si film can be increased from 7 to 40 μm after 6 h of MILC annealing. The doped boron atoms generate a large number of dangling bonds, which then capture the metal atoms to interrupt the MILC processing thus retarding the growth length. Therefore, the obvious enhancement in MILC length is attributed to the passivation of dangling bonds with hydrogen atoms.
- Japan Society of Applied Physicsの論文
- 2005-09-10
著者
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Chou Tse-heng
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Lin Chun-yu
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Chen Shih-fang
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Fang Yuen-kuen
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Lin Chun-Yu
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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Fang Yuen-Kuen
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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Lin Ping-Chang
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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Lee Tsung-Han
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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Lin Chun-Sheng
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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Chen Shih-Fang
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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