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Ulsi Device Development Laboratory Nec Corporation | 論文
- Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- Spectroscopic Study of Rapid Mixing and Cooling of a High-Density He Plasma Flow Penetrating into Hydrogen Gas
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Reticle Critical Dimension Latitude for Fabrication of 0.18 μm Line Patterns
- Standing Wave Effect of Various Illumination Methods in 0.25 μm KrF Excimer Laser Lithography
- Void-Free Bonded SOI Substrates for High-Voltage, High-Current Vertical DMOS-Type Power ICs
- A New Post-Metal Threshold Voltage Adjustment Scheme by Hydrogen Ion Implantation
- Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists
- Photoacid Structure Effects on Environmental Stability of 193 nm Chemically Amplified Positive Resists
- Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing (Special Issue on Scientific ULSI Manufacturing Technology)
- Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy
- Dissolution Kinetics Analysis for Chemically Amplified Deep Ultraviolet Resist
- Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method