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ULSI Research Center, Toshiba Corp. | 論文
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction
- Representative Figure Method for Proximity Effect Correction [II]
- Representative Figure Method for Proximity Effect Correction
- Prebake Effects in Chemical Amplification Electron-Beam Resist : Resist and Processes
- Prebake Effects in Chemical Amplification Electron-Beam Resist
- Electron Beam Calibration Method for Character Projection Exposure System EX-8D
- Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D
- Mechanism of Corrosion in Al-Si-Cu
- In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
- Formation of Single-Crystal Al Interconnection by In Situ Annealing
- Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF_6 and SiH_4 Mixture
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation : Lithography Technology
- Low Dielectric Constant Insulator by Downstream Plasma CVD at Room Temperature Using Si(CH_3)_4/O_2
- Main-Field Stitching Accuracy Analysis in Electron Beam Writing Systems
- A Soft X-Ray Microscope Using an Imaging Detector
- Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
- Fluorine Doped SiO_2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection
- Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O_2
- Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition : Beam Induced Physics and Chemistry