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Toshiba Research and Development Center | 論文
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Numerical Analysis of Leakage Field Modulation for a Novel Direct Overwrite Medium
- Shallow Donor State Produced by Proton Bombardment of Silicon
- Simultaneous CW Operation of 5-Wavelength Integrated GaInAsP/InP DFB Laser Array with 50 Å Lasing Wavelength Separation
- Piezoelectric Spot Cooler : P: Pyroelectrics
- Two-Dimensional Cyclic Bias Device Simulator and Its Application to GaAs HJFET Pulse Pattern Effect Analysis (Special Issue on TCAD for Semiconductor Industries)
- Donor Levels in Si-Doped AlGaAs Grown by MBE
- Acoustic Field Analysis Using Superposed Sound Sources
- Electrical Properties of Polycrystalline Silicon MOSFETs on Glass : C-4: THIN FILM DEVICES
- Drift-Velocity Saturation of Holes in Si Inversion Layers
- Note on Limitations in MOS LSI's from a Design Viewpoint : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
- Electrical Characteristics of Depletion-Type SOS MOS Devices
- Mobility Hump and Inversion Layer Subbands in Si on Sapphire
- Single Silicon Etching Profile Simulation
- Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI : A-3: DEVICE TECHNOLOGY (III)
- A Learning Algorithm for a Neural Network LSI with Restricted Integer Weights (Special Issue on New Concept Device and Novel Architecture LSIs)
- Fabrication of an Amorphous Composite Alloy
- Substituted Amorphous Co-Fe-Si-B Alloys
- Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl_2 Atmosphere
- Acceptors and the Edge Emissions in CdS and ZnSe